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Numéro de référence | CHA3667aQDG | ||
Description | 7-20GHz Medium Power Amplifier | ||
Fabricant | United Monolithic Semiconductors | ||
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CHA3667aQDG
RoHS COMPLIANT
7-20GHz Medium Power Amplifier
GaAs Monolithic Microwave IC in SMD package
Description
The CHA3667aQDG is a wide band
monolithic medium power amplifier. It is
designed for a wide range of applications,
from military to commercial communication
systems.
The circuit is manufactured with a Power-
pHEMT process, 0.15µm gate length, via
hole through the substrate.
It is ESD protected on RF ports thanks to
DC specific filter circuits.
It is available in lead-free SMD package.
Main Features
■ Broadband performance 7-20GHz
■ Self-biased
■ 23dB gain @ 2.7dB noise figure
■ 20dBm Output power @1dBcp
■ DC power consumption, 175mA @ 4.2V
■ 24L-QFN4X4 SMD package
■ MSL1
UMS
A3667A
YYWW
RFin
Vd
RFout
Main Characteristics
Tamb = +25°C, Vd= 4.2V
Symbol
Parameter
Min Typ Max
Fop Input frequency range
7 20
G Small signal gain
21 23
NF Noise Figure
2.7 3.5
P-1dB Output power at 1dB gain compression
18.5 20
Id Bias current
130 175 220
ESD Protections: Electrostatic discharge sensitive device observe handling precautions!
Unit
GHz
dB
dB
dBm
mA
Ref. : DSCHA3667aQDG0158 - 07 Jun 10
1/16
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - BP46 - 91401 Orsay Cedex France
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
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Pages | Pages 16 | ||
Télécharger | [ CHA3667aQDG ] |
No | Description détaillée | Fabricant |
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