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What is BGU7062?

This electronic component, produced by the manufacturer "NXP Semiconductors", performs the same function as "Analog high linearity low noise variable gain amplifier".


BGU7062 Datasheet PDF - NXP Semiconductors

Part Number BGU7062
Description Analog high linearity low noise variable gain amplifier
Manufacturers NXP Semiconductors 
Logo NXP Semiconductors Logo 


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BGU7062
Analog high linearity low noise variable gain amplifier
Rev. 1 — 10 August 2012
Preliminary data sheet
1. Product profile
1.1 General description
The BGU7062 is a fully integrated analog-controlled variable gain amplifier module. Its
low noise and high linearity performance makes it ideal for sensitive receivers in cellular
base station applications. The BGU7062 is operating in the 1710 MHz to 1785 MHz
frequency range and has a gain control range of 35 dB. At maximum gain the noise figure
is 0.85 dB. The gain is analog-controlled having maximum gain at 0 V and minimum gain
at 3.3 V. The LNA can be bypassed extending the dynamic range. The BGU7062 is
internally matched to 50 ohm, meaning no external matching is required, enabling ease of
use. It is housed in a 16 pins 8 mm 8 mm 1.3 mm leadless HLQFN16R package
SOT1301.
1.2 Features and benefits
Input and output internally matched to 50
Low noise figure of 0.85 dB
High input IP3 of 0.8 dBm
High Pi(1dB) of 12.8 dBm
Bypass mode of LNA giving high dynamic gain range
Gain control range of 0 dB to 35 dB
Single 5 V supply
Single analog gain control of 0 V to 3.3 V
Unconditionally stable up to 12.75 GHz
Moisture sensitivity level 3
ESD protection at all pins
1.3 Applications
Cellular base stations, remote radio heads
3G, LTE infrastructure
Low noise applications with variable gain and high linearity requirements
Active antenna

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BGU7062 equivalent
NXP Semiconductors
BGU7062
Analog high linearity low noise variable gain amplifier
8. Characteristics
Table 7. Characteristics high gain mode
GS1 = LOW; GS2 = HIGH (see Table 9); VCC1 = 5 V; VCC2 = 5 V; f = 1750 MHz; Tamb = 25 C; input and output 50 ;
unless otherwise specified. All RF parameters have been characterized at the device RF input and RF output terminals.
Symbol Parameter
Conditions
Min Typ Max Unit
ICC(tot)
Gp(min)
Gp(max)
Gp(flat)
NF
IP3I
Pi(1dB)
RLin
RLout
K
total supply current
minimum power gain
maximum power gain
power gain flatness
noise figure
input third-order intercept point
Vctrl(Gp) = 3.3 V
Vctrl(Gp) = 0 V
1710 MHz f 1785 MHz; 18 dB Gp 35 dB
Vctrl(Gp) = 0 V (maximum power gain)
Gp = 35 dB
Gp = 18 dB
2-tone; tone-spacing = 1.0 MHz
Gp = 35 dB
Gp = 30 dB
Gp = 29 dB
Gp = 18 dB
input power at 1 dB gain compression Gp = 35 dB
Gp = 30 dB
Gp = 29 dB
Gp = 18 dB
input return loss
Vctrl(Gp) = 0 V (maximum power gain)
Gp = 35 dB
output return loss
Vctrl(Gp) = 0 V (maximum power gain)
Rollett stability factor
0 GHz f 12.75 GHz
190 220
- 13.5
- 37
- 0.3
- 0.85
- 0.95
- 5.80
250 mA
- dB
- dB
- dB
- dB
1.1 dB
- dB
0 0.8 -
- 3.2 -
- 3.5 -
- 5.0 -
14 12.8 -
- 7.5 -
- 7.0 -
- 5.9 -
- 30 -
- 25 -
- 17 -
1-
-
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dB
dB
dB
Table 8. Characteristics low gain mode
GS1 = HIGH; GS2 = LOW (see Table 9); VCC1 = 5 V; VCC2 = 5 V; f = 1750 MHz; Tamb = 25 C; input and output 50 ;
unless otherwise specified. All RF parameters have been characterized at the device RF input and RF output terminals.
Symbol Parameter
Conditions
Min Typ Max Unit
ICC(tot)
Gp(min)
Gp(max)
Gp(flat)
NF
total supply current
minimum power gain
maximum power gain
power gain flatness
noise figure
IP3I input third-order intercept point
Vctrl(Gp) = 3.3 V
Vctrl(Gp) = 0 V
1710 MHz f 1785 MHz; 3 dB Gp 17 dB
Gp = 17 dB
Gp = 3 dB
2-tone; tone-spacing = 1.0 MHz
Gp = 17 dB
Gp = 12 dB
Gp = 11 dB
Gp = 3 dB
165 190 215 mA
- 6.6 - dB
- 18.6 - dB
- 0.1 - dB
- 9.8 - dB
- 20.6 - dB
-
- 20 - dBm
- 24 - dBm
- 25 - dBm
- 28 - dBm
BGU7062
Preliminary data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 10 August 2012
© NXP B.V. 2012. All rights reserved.
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