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PDF BGU7061 Data sheet ( Hoja de datos )
| Número de pieza | BGU7061 | |
| Descripción | Analog high linearity low noise variable gain amplifier | |
| Fabricantes | NXP Semiconductors | |
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BGU7061
Analog high linearity low noise variable gain amplifier
Rev. 2 — 29 January 2015
Product data sheet
1. Product profile
1.1 General description
The BGU7061 is a fully integrated analog-controlled variable gain amplifier module. Its
low noise and high linearity performance makes it ideal for sensitive receivers in cellular
base station applications. The BGU7061 is operating in the 770 MHz to 915 MHz
frequency range and has a gain control range of more than 35 dB. At maximum gain the
noise figure is 0.74 dB. The gain is analog-controlled having maximum gain at 0 V and
minimum gain at 3.3 V. The LNA can be bypassed extending the dynamic range. The
BGU7061 is internally matched to 50 ohm, meaning no external matching is required,
enabling ease of use. It is housed in a 16 pins 8 mm 8 mm 1.3 mm leadless
HLQFN16R package SOT1301.
1.2 Features and benefits
Input and output internally matched to 50
Low noise figure of 0.74 dB
High input IP3 of 2 dBm
High Pi(1dB) of 12.5 dBm
Bypass mode of LNA giving high dynamic gain range
Gain control range of 0 dB to 35 dB
Single 5 V supply
Single analog gain control of 0 V to 3.3 V
Unconditionally stable up to 12.75 GHz
Moisture sensitivity level 3
ESD protection at all pins
1.3 Applications
Cellular base stations, remote radio heads
3G, LTE infrastructure
Low noise applications with variable gain and high linearity requirements
Active antenna
1 page  
NXP Semiconductors
BGU7061
Analog high linearity low noise variable gain amplifier
5. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VCC supply voltage
Vctrl(Gp) power gain control voltage
VI(GS1) input voltage on pin GS1
VI(GS2) input voltage on pin GS2
Pi(RF)CW continuous waveform RF input power
Vctrl(Gp) = 0 V; 777 MHz f 915 MHz
high gain mode
low gain mode
Tj
Tstg
VESD
junction temperature
storage temperature
electrostatic discharge voltage
Human Body Model (HBM); according to
ANSI/ESDA-JEDEC JS-001-2020-Device Testing,
Human Body Model
Charged Device Model (CDM); according to
JEDEC standard 22-C101
Min Max Unit
06 V
1 +3.6 V
1 +3.6 V
1 +3.6 V
[1] - 10 dBm
[2] - 15 dBm
- 150 C
40 +150 C
- 2 kV
- 750 V
[1] high gain mode: GS1 = LOW; GS2 = HIGH (see Table 15)
[2] low gain mode: GS1 = HIGH; GS2 = LOW (see Table 15)
6. Recommended operating conditions
Table 5.
Symbol
VCC1
VCC2
Vctrl(Gp)
VI(GS1)
VI(GS2)
Z0
Tcase
Recommended operating conditions
Parameter
Conditions
supply voltage 1
supply voltage 2
power gain control voltage
input voltage on pin GS1
input voltage on pin GS2
characteristic impedance
case temperature
Min Typ Max Unit
4.75 5
5.25 V
4.75 5
5.25 V
0-
3.3 V
0-
3.3 V
0-
3.3 V
- 50 -
40 -
+85 C
7. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter
Rth(j-case) thermal resistance from junction to case
[1] The case temperature is measured at the ground solder pad.
Conditions
Typ Unit
[1] 42 K/W
BGU7061
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 29 January 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
5 of 27
5 Page 
NXP Semiconductors
BGU7061
Analog high linearity low noise variable gain amplifier
Table 14. Characteristics low gain mode …continued
GS1 = HIGH; GS2 = LOW (see Table 15); VCC1 = 5 V; VCC2 = 5 V; f = 850 MHz; Tamb = 25 C; input and output 50 ;
unless otherwise specified. All RF parameters have been characterized at the device RF input and RF output terminals.
Symbol Parameter
Conditions
Min Typ Max Unit
Pi(1dB)
RLin
RLout
K
input power at 1 dB gain compression
input return loss
output return loss
Rollett stability factor
Gp = 17 dB
Gp = 12 dB
Gp = 11 dB
Gp = 3 dB
Vctrl(Gp) = 0 V (maximum power gain)
Gp = 17 dB
Vctrl(Gp) = 0 V (maximum power gain)
0 GHz f 12.75 GHz
- 5.7 -
- 10.5 -
- 11.2 -
- 13.5 -
- 25.1 -
- 23.5 -
- 18.7 -
1-
-
dBm
dBm
dBm
dBm
dB
dB
dB
8.5 Gain switch truth table
Table 15. Gain switch truth table
VCC1 = 5 V; VCC2 = 5 V; Tamb = 25 C
Gain mode
GS1
logic
high gain mode
LOW
low gain mode
HIGH
VGS1
0 V to 0.5 V
2 V to 3.3 V
GS2
logic
HIGH
LOW
VGS2
2 V to 3.3 V
0 V to 0.5 V
8.6 Graphs
*S
G%
DDD
*S
G%
DDD
I *+]
I *+]
GS1 = LOW; GS2 = HIGH; VCC1 = 5 V; VCC2 = 5 V;
Vctrl(Gp) = 0 V.
(1) Tamb = 40 C
(2) Tamb = +25 C
(3) Tamb = +85 C
Fig 3. Power gain as a function of frequency in high
gain mode; typical values
GS1 = HIGH; GS2 = LOW; VCC1 = 5 V; VCC2 = 5 V;
Vctrl(Gp) = 0 V.
(1) Tamb = 40 C
(2) Tamb = +25 C
(3) Tamb = +85 C
Fig 4. Power gain as a function of frequency in low
gain mode; typical values
BGU7061
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 29 January 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
11 of 27
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| Páginas | Total 27 Páginas | |
| PDF Descargar | [ Datasheet BGU7061.PDF ] | |
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