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NXP Semiconductors - SiGe:C Low Noise High Linearity Amplifier

Numéro de référence BGU7053
Description SiGe:C Low Noise High Linearity Amplifier
Fabricant NXP Semiconductors 
Logo NXP Semiconductors 





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BGU7053 fiche technique
BGU7053
SiGe:C Low Noise High Linearity Amplifier
Rev. 2 — 21 February 2012
Product data sheet
1. Product profile
1.1 General description
The BGU7053 is a low noise high linearity amplifier for wireless infrastructure
applications.The LNA has a high input and output return loss and is designed to operate
between 2.3 GHz and 2.8 GHz. It is housed in a 3 mm 3 mm 0.85 mm 10-terminal
plastic thin small outline package. The LNA is ESD protected on all terminals.
1.2 Features and benefits
Low Noise Figure (NF) = 0.85 dB at 2500 MHz
High linearity performance, IP3O = 36 dBm at 2500 MHz
High input and output return loss
Unconditionally stable
110 GHz transit frequency - SiGe:C technology
Supply voltage 3.3 V
Small 10-terminal leadless package 3 mm 3 mm 0.85 mm
ESD protection on all terminals
Moisture sensitivity level 1
1.3 Applications
LNA for wireless infrastructure applications (2.3 GHz to 2.8 GHz)
Low noise applications
1.4 Quick reference data
Table 1. Quick reference data
f = 2500 MHz; VCC = 3.3 V; Tamb = 25 C; input and output 50 ; unless otherwise specified.
Symbol Parameter
Conditions Min Typ Max Unit
VCC
ICC
Gass
NF
supply voltage
supply current
associated gain
noise figure
3.0 -
3.6 V
70 90 110 mA
17 18.5 20 dB
- 0.85 1.1 dB
PL(1dB)
IP3O
output power at 1 dB gain compression
output third-order intercept point
11.5 13.5 -
33 36 -
dBm
dBm

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