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PDF IPG20N06S2L-65A Data sheet ( Hoja de datos )
| Número de pieza | IPG20N06S2L-65A | |
| Descripción | Power-Transistor | |
| Fabricantes | Infineon | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IPG20N06S2L-65A (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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OptiMOS® Power-Transistor
Features
• Dual N-channel Logic Level - Enhancement mode
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
• Feasible for automatic optical inspection (AOI)
IPG20N06S2L-65A
Product Summary
VDS
RDS(on),max3)
ID
55 V
65 mΩ
20 A
PG-TDSON-8-10
Type
IPG20N06S2L-65A
Package
PG-TDSON-8-10
Marking
2N06L65
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
one channel active1)
I D T C=25 °C, V GS=10 V
T C=100 °C, V GS=10 V
Pulsed drain current1)
one channel active
I D,pulse -
Avalanche energy, single pulse1, 3)
Avalanche current, single pulse3)
Gate source voltage
E AS
I AS
V GS
I D=10A
-
-
Power dissipation
one channel active
P tot T C=25 °C
Operating and storage temperature T j, T stg -
IEC climatic category; DIN IEC 68-1 -
-
Rev. 1.0
page 1
Value
20
Unit
A
14
80
40
15
±20
43
-55 ... +175
55/175/56
mJ
A
V
W
°C
2013-02-28
1 page  
IPG20N06S2L-65A
5 Typ. output characteristics3)
I D = f(V DS); T j = 25 °C
parameter: V GS
80
60
40
20
0
0123
VDS [V]
7 Typ. transfer characteristics3)
I D = f(V GS); V DS = 6V
parameter: T j
80
60
6 Typ. drain-source on-state resistance3)
R DS(on) = f(I D); T j = 25 °C
parameter: V GS
10 V
160
3.5 V 4 V
4.5 V
5V
5.5 V
140
120
5V
4.5 V
100
80
4V
3.5 V
3V
45
60
40
0
10 V
20 40 60
ID [A]
80
8 Typ. drain-source on-state resistance3)
R DS(on) = f(T j); I D = 15 A; V GS = 10 V
-55 °C
25 °C
120
100
80
175 °C
40
60
20
40
0
1
Rev. 1.0
35
VGS [V]
7 20
-60 -20 20 60 100 140 180
Tj [°C]
page 5
2013-02-28
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IPG20N06S2L-65A.PDF ] | |
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