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PDF IPG20N06S2L-35A Data sheet ( Hoja de datos )
| Número de pieza | IPG20N06S2L-35A | |
| Descripción | Power-Transistor | |
| Fabricantes | Infineon | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IPG20N06S2L-35A (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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OptiMOS® Power-Transistor
Features
• Dual N-channel Logic Level - Enhancement mode
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
• Feasible for automatic optical inspection (AOI)
IPG20N06S2L-35A
Product Summary
VDS
RDS(on),max4)
ID
55 V
35 mΩ
20 A
PG-TDSON-8-10
Type
IPG20N06S2L-35A
Package
PG-TDSON-8-10
Marking
2N06L35
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
one channel active2)
I D T C=25 °C, V GS=10 V1)
T C=100 °C, V GS=10 V
Pulsed drain current2)
one channel active
I D,pulse -
Avalanche energy, single pulse2, 4)
Avalanche current, single pulse4)
Gate source voltage
E AS
I AS
V GS
I D=10A
-
-
Power dissipation
one channel active
P tot T C=25 °C
Operating and storage temperature T j, T stg -
IEC climatic category; DIN IEC 68-1 -
-
Rev. 1.0
page 1
Value
20
Unit
A
20
80
100
15
±20
65
-55 ... +175
55/175/56
mJ
A
V
W
°C
2013-02-28
1 page  
5 Typ. output characteristics4)
I D = f(V DS); T j = 25 °C
parameter: V GS
80
10 V
5V
IPG20N06S2L-35A
6 Typ. drain-source on-state resistance4)
R DS(on) = f(I D); T j = 25 °C
parameter: V GS
100
3V
3.5 V
4V
4.5 V
60
4.5 V
80
40 60
4V
20
0
0123
VDS [V]
7 Typ. transfer characteristics4)
I D = f(V GS); V DS = 6V
parameter: T j
80
-55 °C
60
40
20
3.5 V
40
5V
3 V 10 V
45
20
0
20 40 60
ID [A]
80
8 Typ. drain-source on-state resistance4)
R DS(on) = f(T j); I D = 15 A; V GS = 10 V
25 °C
175 °C
60
50
40
30
20
0
123456
VGS [V]
10
-60 -20 20 60 100 140 180
Tj [°C]
Rev. 1.0
page 5
2013-02-28
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IPG20N06S2L-35A.PDF ] | |
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