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PDF IPG20N04S4-08A Data sheet ( Hoja de datos )
| Número de pieza | IPG20N04S4-08A | |
| Descripción | Power-Transistor | |
| Fabricantes | Infineon | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IPG20N04S4-08A (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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IPG20N04S4-08A
OptiMOS™-T2 Power-Transistor
Features
• Dual N-channel Normal Level - Enhancement mode
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
• Feasible for automatic optical inspection (AOI)
Product Summary
VDS
RDS(on),max4)
ID
40 V
7.6 mΩ
20 A
PG-TDSON-8-10
1
Type
IPG20N04S4-08A
Package
PG-TDSON-8-10
Marking
4N0408
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
one channel active
I D T C=25 °C, V GS=10 V1)
Pulsed drain current2)
one channel active
Avalanche energy, single pulse2, 4)
Avalanche current, single pulse4)
Gate source voltage
Power dissipation
one channel active
T C=100 °C,
V GS=10 V2)
I D,pulse -
E AS
I AS
V GS
I D=10A
-
-
P tot T C=25 °C
Operating and storage temperature T j, T stg -
Value
20
20
80
230
15
±20
65
-55 ... +175
Unit
A
mJ
A
V
W
°C
Rev. 1.0
page 1
2013-02-28
1 page  
5 Typ. output characteristics4)
I D = f(V DS); T j = 25 °C
parameter: V GS
80
10 V 6.5 V
6.25 V
60
IPG20N04S4-08A
6 Typ. drain-source on-state resistance4)
R DS(on) = f(I D); T j = 25 °C
parameter: V GS
45
5V
5.5 V
6V
6V
35
40 25
5.5 V
20
0
024
VDS [V]
7 Typ. transfer characteristics4)
I D = f(V GS); V DS = 6V
parameter: T j
80
15
5V
6.5 V
10 V
5
68
0 20 40 60 80
ID [A]
8 Typ. drain-source on-state resistance4)
R DS(on) = f(T j); I D = 17 A; V GS = 10 V
12
60 10
40 8
20
0
3
Rev. 1.0
175 °C
25 °C
-55 °C
456
VGS [V]
6
74
-60 -20 20 60 100 140 180
Tj [°C]
page 5
2013-02-28
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IPG20N04S4-08A.PDF ] | |
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