|
|
PDF IPD80R1K4P7 Data sheet ( Hoja de datos )
| Número de pieza | IPD80R1K4P7 | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Infineon | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de IPD80R1K4P7 (archivo pdf) en la parte inferior de esta página. Total 13 Páginas | ||
|
No Preview Available !
IPD80R1K4P7
MOSFET
800VCoolMOSªP7PowerTransistor
Thelatest800VCoolMOS™P7seriessetsanewbenchmarkin800V
superjunctiontechnologiesandcombinesbest-in-classperformancewith
stateoftheartease-of-use,resultingfromInfineon’sover18years
pioneeringsuperjunctiontechnologyinnovation.
Features
•Best-in-classFOMRDS(on)*Eoss;reducedQg,Ciss,andCoss
•Best-in-classDPAKRDS(on)
•Best-in-classV(GS)thof3VandsmallestV(GS)thvariationof±0.5V
•IntegratedZenerDiodeESDprotection
•Best-in-classCoolMOS™qualityandreliability;qualifiedforindustrial
gradeapplicationsaccordingtoJEDEC(J-STD20andJESD22)
•Fullyoptimizedportfolio
Benefits
•Best-in-classperformance
•Enablinghigherpowerdensitydesigns,BOMsavingsandlower
assemblycosts
•Easytodriveandtoparallel
•BetterproductionyieldbyreducingESDrelatedfailures
•Lessproductionissuesandreducedfieldreturns
•Easytoselectrightpartsforfinetuningofdesigns
Applications
RecommendedforhardandsoftswitchingflybacktopologiesforLED
Lighting,lowpowerChargersandAdapters,Audio,AUXpowerand
Industrialpower.AlsosuitableforPFCstageinConsumerapplications
andSolar.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseperatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj=25°C
RDS(on),max
Qg,typ
ID
800
1.4
10
4
V
Ω
nC
A
Eoss @ 500V
0.9
µJ
VGS(th),typ
3
V
ESD class (HBM) 2
-
Type/OrderingCode
IPD80R1K4P7
Package
PG-TO 252
Marking
80R1K4P7
DPAK
tab
2
1
3
Drain
Pin 2, Tab
Gate
Pin 1
Source
Pin 3
RelatedLinks
see Appendix A
Final Data Sheet
1 Rev.2.0,2016-07-05
1 page  
800VCoolMOSªP7PowerTransistor
IPD80R1K4P7
Table7Reversediodecharacteristics
Parameter
Symbol
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
VSD
trr
Qrr
Irrm
Min.
-
-
-
-
Values
Typ. Max.
0.9 -
800 -
5-
9-
Unit Note/TestCondition
V VGS=0V,IF=1.4A,Tf=25°C
ns VR=400V,IF=0.7A,diF/dt=50A/µs
µC VR=400V,IF=0.7A,diF/dt=50A/µs
A VR=400V,IF=0.7A,diF/dt=50A/µs
Final Data Sheet
5 Rev.2.0,2016-07-05
5 Page 
800VCoolMOSªP7PowerTransistor
IPD80R1K4P7
6PackageOutlines
MILLIMETERS
INCHES
DIM
MIN MAX MIN MAX
A
2.16
2.41
0.085
0.095
A1
0.00
0.15
0.000
0.006
b
0.64
0.89
0.025
0.035
b2
0.65
1.15
0.026
0.045
b3
4,95
5.50
0.195
0.217
c
0.46
0.61
0.018
0.024
c2
0.40
0.98
0.016
0.039
D
5.97
6.22
0.235
0.245
D1
5.02
5.84
0.198
0.230
E
6.35
6.73
0.250
0.265
E1
4.32
5.21
0.185
0.205
e 2.29 (BSC)
0.090 (BSC)
e1 4.57 (BSC)
0.180 (BSC)
N3
3
H
9.40
10.48
0.370
0.413
L
1.18
1.78
0.046
0.070
L3
0.89
1.27
0.035
0.050
L4
0.51
1.02
0.020
0.040
DOCUMENT NO.
Z8B00003328
SCALE 0
2.5
0 2.5
5mm
EUROPEAN PROJECTION
ISSUE DATE
05-02-2016
REVISION
06
Figure1OutlinePG-TO252,dimensionsinmm/inches
Final Data Sheet
11
Rev.2.0,2016-07-05
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet IPD80R1K4P7.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| IPD80R1K4P7 | MOSFET ( Transistor ) | Infineon |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |