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What is IKW30N60DTP?

This electronic component, produced by the manufacturer "Infineon", performs the same function as "IGBT ( Insulated Gate Bipolar Transistor )".


IKW30N60DTP Datasheet PDF - Infineon

Part Number IKW30N60DTP
Description IGBT ( Insulated Gate Bipolar Transistor )
Manufacturers Infineon 
Logo Infineon Logo 


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IGBT
TRENCHSTOPTMPerformancetechnologycopackedwithRAPID1
fastanti-paralleldiode
IKW30N60DTP
600VDuoPackIGBTanddiode
TRENCHSTOPTMPerformanceseries
Datasheet
IndustrialPowerControl

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IKW30N60DTP equivalent
IKW30N60DTP
TRENCHSTOPTMPerformanceSeries
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES
Collector-emitter saturation voltage VCEsat
Diode forward voltage
VF
Gate-emitter threshold voltage
VGE(th)
Zero gate voltage collector current ICES
Gate-emitter leakage current
Transconductance
IGES
gfs
VGE=0V,IC=2.00mA
VGE=15.0V,IC=30.0A
Tvj=25°C
Tvj=175°C
VGE=0V,IF=15.0A
Tvj=25°C
Tvj=175°C
IC=0.48mA,VCE=VGE
VCE=600V,VGE=0V
Tvj=25°C
Tvj=175°C
VCE=0V,VGE=20V
VCE=20V,IC=30.0A
min.
Value
typ.
max. Unit
600 -
-V
- 1.60 1.80 V
- 1.94 -
- 1.45 1.70 V
- 1.39 -
4.1 5.1 5.7 V
- - 40 µA
---
- - 100 nA
- 26.0 - S
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
DynamicCharacteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Cies
Coes
Cres
QG
Internal emitter inductance
measured 5mm (0.197 in.) from
case
LE
Short circuit collector current
Max. 1000 short circuits
IC(SC)
Time between short circuits: 1.0s
VCE=25V,VGE=0V,f=1MHz
VCC=480V,IC=30.0A,
VGE=15V
VGE=15.0V,VCC400V,
tSC5µs
Tvj=150°C
min.
Value
typ.
max. Unit
- 1050 -
- 58 - pF
- 36 -
- 130.0 - nC
- 13.0 - nH
- 137 - A
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
IGBTCharacteristic,atTvj=25°C
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Tvj=25°C,
VCC=400V,IC=30.0A,
VGE=0.0/15.0V,
RG(on)=10.5,RG(off)=10.5,
Lσ=32nH,Cσ=60pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
Value
min. typ. max. Unit
- 15 - ns
- 21 - ns
- 179 - ns
- 12 - ns
- 0.71 - mJ
- 0.42 - mJ
- 1.13 - mJ
5 Rev.2.1,2016-02-08


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for IKW30N60DTP electronic component.


Information Total 16 Pages
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Featured Datasheets

Part NumberDescriptionMFRS
IKW30N60DTPThe function is IGBT ( Insulated Gate Bipolar Transistor ). InfineonInfineon

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