|
|
Numéro de référence | HG-0812 | ||
Description | GaAs Hall Element | ||
Fabricant | AKM | ||
Logo | |||
1 Page
HG-0812
Absolute Maximum Ratings
Item
Symbol Conditions
Max. Input Voltage
Max.Input Power P
Operating Temp. Range Topr
Storage Temp. Range TSTG
Ta=25
Limit
8
150
40 125
40 150
Unit
V
mW
Electrical Characteristics(Ta=25 )
Item
Symbol
Conditions
Min. Typ. Max. Unit
Output Hall Voltage VH B=50mT, VC=6V
75 130 95 mV
Input Resistance Rin B=0mT, IC =0.1mA
Output Resistance Rout B=0mT, IC =0.1mA
450 750 750
1,000 750 2,000
Offset Voltage
Temp. Coefficient of VH
Temp. Coefficient of Rin
VOS (Vu)
VH
Rin
B=0mT, VC=6V
B=50mT, =5mA
Ta=25 125
B=0mT, =0.1mA
Ta=25 125
16
16 mV
%/
%/
Linearity
B=0.1/0.5T, =5mA
Notes : 1. VH = VHM –VOS (Vu) (VHM:meter indication)
2.
VH
=
1
VH (T1)
X
VH
(T2)
(T2
–
–
VH (T1)
T1)
X
100
3.
Rin=
1
Rin(T1)
X
Rin(T2)
(T2
–
–
Rin(T1)
T1)
X
100
4.
K
=
K (B1) – K (B2)
[K (B1) + K (B2)] / 2
X 100
T1 = 25˚C, T2 = 125˚C
K=
VH
IC • B
B1 = 0.5T, B2 = 0.1T
%
Characteristic Curves
Allowable Package Power Dissipation
200
160
120
80
40
0 0 20 40 60 80 100 120 140
Ambient Temperature(˚C)
51
Shipped in packet-tape reel(5,000pcs per reel)
Notice : It is requested to read and accept "IMPORTANT NOTICE"
written on the back of the front cover of this catalogue.
Dimensional Drawing (Unit : mm)
No.3 and No.5 terminals are
electrically connected.
Land pattern (for reference only) (Unit : mm)
|
|||
Pages | Pages 3 | ||
Télécharger | [ HG-0812 ] |
No | Description détaillée | Fabricant |
HG-0811 | GaAs Hall Element | AKM |
HG-0812 | GaAs Hall Element | AKM |
HG-0813 | GaAs Hall Element | AKM |
HG-0814 | GaAs Hall Element | AKM |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |