2N3790 Datasheet PDF - Inchange Semiconductor
| Part Number | 2N3790 | |
| Description | Silicon PNP Power Transistor | |
| Manufacturers | Inchange Semiconductor | |
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isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2N3790
DESCRIPTION
·Excellent Safe Operating Area
·Low Collector-Emitter Saturation Voltage
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation.
APPLICATIONS
·Designed for medium-speed switching and
amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-80 V
VCEO
Collector-Emitter Voltage
-80 V
VEBO
Emitter-Base Voltage
-7 V
IC Collector Current-Continuous
-10 A
PC Collector Power Dissipation@TC=25℃ 150
W
TJ Junction Temperature
-65~200 ℃
Tstg Storage Temperature
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
1.17 ℃/W
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for 2N3790 electronic component. |
| Information | Total 2 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ 2N3790.PDF Datasheet ] | |
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Featured Datasheets
| Part Number | Description | MFRS |
| 2N3790 | The function is Silicon PNP Power Transistor. Inchange Semiconductor | |
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