DataSheetWiki


2N3789 fiches techniques PDF

Inchange Semiconductor - Silicon PNP Power Transistor

Numéro de référence 2N3789
Description Silicon PNP Power Transistor
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor 





1 Page

No Preview Available !





2N3789 fiche technique
isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2N3789
DESCRIPTION
·Excellent Safe Operating Area
·Low Collector-Emitter Saturation Voltage
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation.
APPLICATIONS
·Designed for medium-speed switching and
amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-60 V
VCEO
Collector-Emitter Voltage
-60 V
VEBO
Emitter-Base Voltage
-7 V
IC Collector Current-Continuous
-10 A
PC Collector Power Dissipation@TC=25150
W
TJ Junction Temperature
-65~200
Tstg Storage Temperature
-65~200
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
1.17 /W
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark

PagesPages 2
Télécharger [ 2N3789 ]


Fiche technique recommandé

No Description détaillée Fabricant
2N3782 Bipolar PNP Device Seme LAB
Seme LAB
2N3789 Silicon PNP Power Transistor Inchange Semiconductor
Inchange Semiconductor
2N3789 POWER TRANSISTORS(10A/150W) Mospec Semiconductor
Mospec Semiconductor
2N3789 SILICON PNP POWER TRANSISTORS Boca Semiconductor Corporation
Boca Semiconductor Corporation

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche