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Numéro de référence | 2N3789 | ||
Description | Silicon PNP Power Transistor | ||
Fabricant | Inchange Semiconductor | ||
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isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2N3789
DESCRIPTION
·Excellent Safe Operating Area
·Low Collector-Emitter Saturation Voltage
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation.
APPLICATIONS
·Designed for medium-speed switching and
amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-60 V
VCEO
Collector-Emitter Voltage
-60 V
VEBO
Emitter-Base Voltage
-7 V
IC Collector Current-Continuous
-10 A
PC Collector Power Dissipation@TC=25℃ 150
W
TJ Junction Temperature
-65~200 ℃
Tstg Storage Temperature
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
1.17 ℃/W
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
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Pages | Pages 2 | ||
Télécharger | [ 2N3789 ] |
No | Description détaillée | Fabricant |
2N3782 | Bipolar PNP Device | Seme LAB |
2N3789 | Silicon PNP Power Transistor | Inchange Semiconductor |
2N3789 | POWER TRANSISTORS(10A/150W) | Mospec Semiconductor |
2N3789 | SILICON PNP POWER TRANSISTORS | Boca Semiconductor Corporation |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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