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Numéro de référence | 2N3198 | ||
Description | Silicon PNP Power Transistor | ||
Fabricant | Inchange Semiconductor | ||
Logo | |||
isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2N3198
DESCRIPTION
·Excellent Safe Operating Area
·With TO-3 package
·Low collector saturation voltage
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·For medium-speed switching and amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-100
V
VCEO
Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage
-10 V
IC Collector Current-Continuous
-5 A
PC
TJ, Tstg
Collector Power Dissipation@TC=25℃
75
Operating and Storage Junction
Temperature Range
-65~+200
W
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
1.17 ℃/W
isc website:www.iscsemi.com1
isc & iscsemi is registered trademark
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Pages | Pages 2 | ||
Télécharger | [ 2N3198 ] |
No | Description détaillée | Fabricant |
2N3190 | PNP Transistor | SSDI |
2N3195 | (2N3xxx) | ETC |
2N3195 | PNP Transistor | SSDI |
2N3196 | Silicon PNP Power Transistors | SavantIC |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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