DataSheetWiki


3DD5024 fiches techniques PDF

Inchange Semiconductor - Silicon NPN Power Transistor

Numéro de référence 3DD5024
Description Silicon NPN Power Transistor
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor 





1 Page

No Preview Available !





3DD5024 fiche technique
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION
·High Breakdown Voltage-
: VCBO= 1500V (Min)
·Wide Area of Safe Operation
·Built-in Damper Diode
APPLICATIONS
·Horizontal deflection output for TV, CRT monitor
applicaitions.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCEO
Collector-Emitter Voltage
600 V
VEBO
Emitter-Base Voltage
6V
IC Collector Current- Continuous 8 A
IB Base Current- Continuous
4A
ICP Collector Current-Pulse
PC
Collector Power Dissipation
@ TC=25
TJ Junction Temperature
16 A
35 W
150
Tstg Storage Temperature Range
-55~150
isc Product Specification
3DD5024
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark

PagesPages 2
Télécharger [ 3DD5024 ]


Fiche technique recommandé

No Description détaillée Fabricant
3DD5023 CASE-RATED BIPOLAR TRANSISTOR JILIN SINO-MICROELECTRONICS
JILIN SINO-MICROELECTRONICS
3DD5023P CASE-RATED BIPOLAR TRANSISTOR JILIN SINO
JILIN SINO
3DD5024 Silicon NPN Power Transistor Inchange Semiconductor
Inchange Semiconductor
3DD5024 CASE-RATED BIPOLAR TRANSISTOR JILIN SINO-MICROELECTRONICS
JILIN SINO-MICROELECTRONICS

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche