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Numéro de référence | 3DD5024 | ||
Description | Silicon NPN Power Transistor | ||
Fabricant | Inchange Semiconductor | ||
Logo | |||
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION
·High Breakdown Voltage-
: VCBO= 1500V (Min)
·Wide Area of Safe Operation
·Built-in Damper Diode
APPLICATIONS
·Horizontal deflection output for TV, CRT monitor
applicaitions.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCEO
Collector-Emitter Voltage
600 V
VEBO
Emitter-Base Voltage
6V
IC Collector Current- Continuous 8 A
IB Base Current- Continuous
4A
ICP Collector Current-Pulse
PC
Collector Power Dissipation
@ TC=25℃
TJ Junction Temperature
16 A
35 W
150 ℃
Tstg Storage Temperature Range
-55~150 ℃
isc Product Specification
3DD5024
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
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Pages | Pages 2 | ||
Télécharger | [ 3DD5024 ] |
No | Description détaillée | Fabricant |
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3DD5023P | CASE-RATED BIPOLAR TRANSISTOR | JILIN SINO |
3DD5024 | Silicon NPN Power Transistor | Inchange Semiconductor |
3DD5024 | CASE-RATED BIPOLAR TRANSISTOR | JILIN SINO-MICROELECTRONICS |
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