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Inchange Semiconductor - Silicon PNP Power Transistor

Numéro de référence 2N3174
Description Silicon PNP Power Transistor
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor 





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2N3174 fiche technique
isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2N3174
DESCRIPTION
·Excellent Safe Operating Area
·Collector-Emitter Saturation Voltage-
: VCE(sat)= -0.75V(Max)@ IC = -1A
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·All semelab hermetically sealed products,can be processed
in accordance with the requirements of BS,CECC,and
JAN,JANTX and JANTXV and JAN specifications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-100
V
VCEO
Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage
-10 V
IC Collector Current-Continuous
-3 A
PC
TJ, Tstg
Collector Power Dissipation@TC=25
75
Operating and Storage Junction
Temperature Range
-65~+150
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
1.67 /W
isc websitewww.iscsemi.com1
isc & iscsemi is registered trademark

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