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شماره قطعه | 3DD56 | ||
شرح مفصل | NPN silicon low-frequency high-power transistors | ||
تولید کننده | ETC | ||
آرم | ![]() |
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![]() 3DD56/3DD57 型 NPN 硅低频大功率晶体管
参数符号
测试条件
规范值
单位
ABCDE F
PCM TC=75℃
10
W
ICM
极
限 Tjm
值 Tstg
Rth
VCE=10V
IC=0.2A
3
175
-55~150
10
A
℃
℃
℃/W
V(BR)CBO
ICB=3mA
≥30
≥50
≥80 ≥110 ≥150 ≥200
V
V(BR)CEO
ICE=3mA
≥30
≥50
≥80 ≥110 ≥150 ≥200
V
V(BR)EBO
IEB=5mA
≥5.0
V
直 ICBO
VCB=20V
≤0.5
mA
流 ICEO
参 IEBO
数 VBEsat
VCEsat
VCE=20V
VEB=4V
IC=0.75A
IB=0.15A
≤1.0
≤0.5
≤1.0
≤1.0
mA
mA
V
VCE=5V
hFE
IC=0.75A
15~180
外
引
线
说
明
SMD-1
B2-01B(F1)
替代型号:2SC2971、2N2035
TO-220
TO-257
1. E 发射极
2. B 基 极
3. C 集电极
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قانون اساسی | صفحه 1 | ||
دانلود | [ 3DD56 دیتاشیت ] |
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www.DataSheetWiki.com | 2020 | تماس با ما | جستجو |