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Número de pieza | IDP15E60 | |
Descripción | Fast Switching Emitter Controlled Diode | |
Fabricantes | Infineon | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IDP15E60 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! IDP15E60
Fast Switching Emitter Controlled Diode
Features
• 600V Emitter Controlled technology
• Fast recovery
• Soft switching
• Low reverse recovery charge
• Low forward voltage
• Easy paralleling
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
• Qualified according to JEDEC for target applications
Product Summary
VRRM
IF
VF
Tjmax
600 V
15 A
1.5 V
175 °C
PG-TO220-2
Type
IDP15E60
Package
PG-TO220-2
Ordering Code Marking Pin 1 PIN 2 PIN 3
- D15E60 C A -
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
PPaararammeterter
SymSybmobl ol
RReeppeteittiviteivpeepakearekverersveevrosletagveoltage
CCoonntintiunoouussfofrowrawrad rcdurcreunrrt ent
TTCC==2255°CC
TTCC==9900°CC
SSuurgrge enonnornepreetpitievteitfiovrewfaordrwcaurrrdencturrent
TC = 25C, tp = 10 ms, sine halfwave
MTaCx=i2m5u°mC, rtepp=e1t0itimves,fosrinwearhdalcfwurarveent
TMC a=x2im5Cum, tprleimpietetditibvyetjf,moarxw, Dar=d0c.5urrent
PToCw=e2r5d°Cis,stippalitmiointed by Tjmax, D=0.5
TPCo=w2e5rCdissipation
TTCC==2950°CC
OTpCe=r9a0ti°nCg junction temperature
SOtopraegraettienmgpaenradtusretorage temperature
SSooldldereinrgintgemtepmerpaeturraeture
1w.6amvemso(l0d.e0r6in3gi,n1.).6frmomm (c0a.s0e63foinr .1)0frosm case for 10s
VRRVMR R M
IF
IF
IFSMI F S M
IFRMI F R M
PtotPt o t
Tj
Tj , TTssttgg
TS TS
Rev. 2.6
Page 1
VaVlauleue
606000
292.92.2
191.96.6
6060
4545
UUnint it
VV
A
A
A
A
83.3
834.73.2
-4407….2+175
-55-5..5.+...1+71550
262060
WW
°C°C
°C
20131205
1 page IDP15E60
5 Typ. reverse recovery time
trr = f (diF/dt)
parameter: VR = 400V, Tj = 125°C
500
ns
400
350
30A
300 15A
7.5A
250
200
150
100
50
6 Typ. reverse recovery charge
Qrr=f(diF/dt)
parameter: VR = 400V, Tj = 125 °C
1450
nC
30A
1250
1150
1050
15A
950
850
7.5A
750
650
0
200 300 400 500 600 700 800 A/μs 1000
diF/dt
7 Typ. reverse recovery current
Irr = f (diF/dt)
parameter: VR = 400V, Tj = 125°C
18
A
550
200 300 400 500 600 700 800 A/μs 1000
diF/dt
8 Typ. reverse recovery softness factor
S = f(diF/dt)
parameter: VR = 400V, Tj = 125°C
11
16 30A
15
15A
7.5A
14
13
12
11
10
9
8
7
6
5
4
200 300 400 500 600 700 800 A/μs 1000
diF/dt
Rev. 2.6
Page 5
9
8
30A
7
15A
6
5 7,5A
4
3
200 300 400 500 600 700 800 A/μs 1000
diF/dt
20131205
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet IDP15E60.PDF ] |
Número de pieza | Descripción | Fabricantes |
IDP15E60 | Fast Switching Emitter Controlled Diode | Infineon |
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