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Numéro de référence | 2SC3085 | ||
Description | Silicon NPN Power Transistor | ||
Fabricant | Inchange Semiconductor | ||
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1 Page
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC3085
DESCRIPTION
·High Breakdown Voltage-
: V(BR)CBO= 500V(Min)
·Fast Switching Speed
·Wide Area of Safe Operation
APPLICATIONS
·Designed for switching regulator applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
500 V
VCEO
Collector-Emitter Voltage
400 V
VEBO
Emitter-Base Voltage
7V
IC Collector Current-Continuous 25 A
ICM Collector Current-Peak
40 A
IB Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25℃
TJ Junction Temperature
8A
160 W
150 ℃
Tstg Storage Temperature Range
-55~150
℃
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
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Pages | Pages 2 | ||
Télécharger | [ 2SC3085 ] |
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