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2SC2528 fiches techniques PDF

Inchange Semiconductor - Silicon NPN Power Transistor

Numéro de référence 2SC2528
Description Silicon NPN Power Transistor
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor 





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2SC2528 fiche technique
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC2528
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min)
·Low Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.0V(Max) @IC= 0.7A
·Complement to Type 2SA1078
APPLICATIONS
·High frequency power amplifier,
Audio power amplifier
Dirvers
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
120 V
VCEO
Collector-Emitter Voltage
120 V
VEBO
Emitter-Base Voltage
6V
IC Collector Current-Continuous
PC
Collector Power Dissipation
@ TC=25
TJ Junction Temperature
2.0 A
25 W
150
Tstg Storage Temperature Range
-65~150
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark

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