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Numéro de référence | 2N6584 | ||
Description | Silicon NPN Power Transistor | ||
Fabricant | Inchange Semiconductor | ||
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1 Page
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2N6584
DESCRIPTION
·Excellent Safe Operating Area
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 450V(Min)
·High Current Capability
·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.5 V(Max)@ IC = 10A
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for linear amplifiers, series pass regulators, and
inductive switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
550 V
VCEO
Collector-Emitter Voltage
450 V
VEBO
Emitter-Base Voltage
9V
IC Collector Current-Continuous
10 A
PC Collector Power Dissipation@TC=25℃ 125
W
TJ Junction Temperature
200 ℃
Tstg Storage Temperature
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX
1.17
UNIT
℃/W
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
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Pages | Pages 2 | ||
Télécharger | [ 2N6584 ] |
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