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2N6584 fiches techniques PDF

Inchange Semiconductor - Silicon NPN Power Transistor

Numéro de référence 2N6584
Description Silicon NPN Power Transistor
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor 





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2N6584 fiche technique
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2N6584
DESCRIPTION
·Excellent Safe Operating Area
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 450V(Min)
·High Current Capability
·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.5 V(Max)@ IC = 10A
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for linear amplifiers, series pass regulators, and
inductive switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
550 V
VCEO
Collector-Emitter Voltage
450 V
VEBO
Emitter-Base Voltage
9V
IC Collector Current-Continuous
10 A
PC Collector Power Dissipation@TC=25125
W
TJ Junction Temperature
200
Tstg Storage Temperature
-65~200
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX
1.17
UNIT
/W
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark

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