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2N6289 fiches techniques PDF

Inchange Semiconductor - Silicon NPN Power Transistor

Numéro de référence 2N6289
Description Silicon NPN Power Transistor
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor 





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2N6289 fiche technique
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2N6289
DESCRIPTION
·DC Current Gain-
: hFE = 30-150@ IC= 3A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 30V(Min)
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in general-purpose amplifier and
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
40 V
VCEO
Collector-Emitter Voltage
30 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current-Continuous
7A
ICM Collector Current-Peak
10 A
IB Base Current
PC
Collector Power Dissipation
@ TC=25
TJ Junction Temperature
3A
40 W
150
Tstg Storage Temperature Range
-65~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Thermal Resistance, Junction to Case
3.125 /W
Rth j-a Thermal Resistance,Junction to Ambient 70 /W
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark

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