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Numéro de référence | 2SC3992 | ||
Description | Silicon NPN Power Transistor | ||
Fabricant | Inchange Semiconductor | ||
Logo | |||
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC3992
DESCRIPTION
·High Switching Speed
·High Breakdown Voltage-
: V(BR)CBO= 1100V(Min)
APPLICATIONS
·Designed for horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
1100
V
VCEO
Collector-Emitter Voltage
800 V
VEBO
Emitter-Base Voltage
7V
IC Collector Current-Continuous
12 A
ICM Collector Current-Pulse
PC
Collector Power Dissipation
@ TC=25℃
TJ Junction Temperature
30 A
200 W
150 ℃
Tstg Storage Temperature Range
-55~150 ℃
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
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Pages | Pages 2 | ||
Télécharger | [ 2SC3992 ] |
No | Description détaillée | Fabricant |
2SC3990 | NPN Triple Diffused Planar Silicon Transistor | Sanyo Semicon Device |
2SC3990 | Silicon NPN Power Transistor | Inchange Semiconductor |
2SC3991 | NPN Triple Diffused Planar Silicon Transistor | Sanyo Semicon Device |
2SC3991 | Silicon NPM Power Transistor | Inchange Semiconductor |
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