DataSheetWiki


2SC3992 fiches techniques PDF

Inchange Semiconductor - Silicon NPN Power Transistor

Numéro de référence 2SC3992
Description Silicon NPN Power Transistor
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor 





1 Page

No Preview Available !





2SC3992 fiche technique
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC3992
DESCRIPTION
·High Switching Speed
·High Breakdown Voltage-
: V(BR)CBO= 1100V(Min)
APPLICATIONS
·Designed for horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
1100
V
VCEO
Collector-Emitter Voltage
800 V
VEBO
Emitter-Base Voltage
7V
IC Collector Current-Continuous
12 A
ICM Collector Current-Pulse
PC
Collector Power Dissipation
@ TC=25
TJ Junction Temperature
30 A
200 W
150
Tstg Storage Temperature Range
-55~150
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark

PagesPages 2
Télécharger [ 2SC3992 ]


Fiche technique recommandé

No Description détaillée Fabricant
2SC3990 NPN Triple Diffused Planar Silicon Transistor Sanyo Semicon Device
Sanyo Semicon Device
2SC3990 Silicon NPN Power Transistor Inchange Semiconductor
Inchange Semiconductor
2SC3991 NPN Triple Diffused Planar Silicon Transistor Sanyo Semicon Device
Sanyo Semicon Device
2SC3991 Silicon NPM Power Transistor Inchange Semiconductor
Inchange Semiconductor

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche