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2SC2412KFRA fiches techniques PDF

ROHM Semiconductor - General purpose transistor

Numéro de référence 2SC2412KFRA
Description General purpose transistor
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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2SC2412KFRA fiche technique
AEC-Q101 Qualified
General purpose transistor (50V, 0.15A)
2SC2412KF/R2ASC/ 420S8C14/028S1FCR4A61/72/S2CS4C651675F8RA/ /2SC5658FHA
Features
1. Low Cob. Cob=2.0pF (Typ.)Cob=2.0pF (Typ.)
2. Complements the 2SAA11003377AAKKFR/A2S/ 2AS1A517567A6A/FRA
22SSAA11777744FHRA/ /22SSAA220029F. HA
Dimensions (Unit : mm)
2S2CS2C421421K2FKRA
2S2CS4C048018F1RA
Structure
Epitaxial planar type
NPN silicon transistor
1.25
1.6 2.1
2.8
0.3Min.
Each lead has same dimensions
ROHM : SMT3
EIAJ : SC-59
JEDEC : SOT-346
(1) Emitter
(2) Base
(3) Collector
Abbreviated symbol: B*
2SC24S6C174F6R17A
(1)
(3) (2)
0.8
1.6
0.1Min.
0.1Min.
Each lead has same dimensions
ROHM : UMT3
EIAJ : SC-70
JEDEC : SOT-323
(1) Emitter
(2) Base
(3) Collector
Abbreviated symbol: B*
2S2SCC5655685F8HA
1.2
0.2 0.8 0.2
(2)
(3)
(1)
0.15Max.
Absolute maximum (Ta=25C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power 22SSCC22441122KKF, 2RSAC, 420S8C14081FRA
dissipation
22SSCC44661177F, 2RSAC, 526S5C85658FHA
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
ROHM : EMT3
EIAJ : SC-75A
JEDEC : SOT-416
(1) Emitter
(2) Base
(3) Collector
Abbreviated symbol: B*
* Denotes hFE
Limits
60
50
7
0.15
0.2
0.15
150
55 to +150
Unit
V
V
V
A
W
°C
°C
ROHM : VMT3
(1) Base
(2) Emitter
(3) Collector
Abbreviated symbol: B*
Electrical characteristics (Ta=25C)
Parameter
Symbol
Collector-base breakdown voltage BVCBO
Collector-emitter breakdown voltage BVCEO
Emitter-base breakdown voltage
BVEBO
Collector cutoff current
ICBO
Emitter cutoff current
IEBO
DC current transfer ratio
hFE
Collector-emitter saturation voltage VCE(sat)
Transition frequency
Output capacitance
fT
Cob
Min.
60
50
7
120
Typ.
180
2
Max.
0.1
0.1
390
0.4
3.5
Unit
V
V
V
μA
μA
V
MHz
pF
Conditions
IC=50μA
IC=1mA
IE=50μA
VCB=60V
VEB=7V
VCE=6V, IC=1mA
IC/IB=50mA/5mA
VCE=12V, IE=2mA, f=100MHz
VCE=12V, IE=0A, f=1MHz
www.rohm.com
c 2012 ROHM Co., Ltd. All rights reserved.
1/3
2012.01 - Rev.D

PagesPages 6
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