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PDF 2SB1216 Data sheet ( Hoja de datos )
| Número de pieza | 2SB1216 | |
| Descripción | Silicon PNP Power Transistor | |
| Fabricantes | Inchange Semiconductor | |
| Logotipo |  |
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isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SB1216
DESCRIPTION
·Excellent linearity of hFE
·Small and slim package facilitating compactness of sets
·Low collector-to-emitter saturation voltage
·Fast switching speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Relay drivers,High speed inverters,converters and other
general high-current switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-120
V
VCEO
Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage
-6 V
IC Collector Current-Continuous -4 A
ICP Collector Current-Pulse
Collector Power Dissipation
@ TC=25℃
PC
Collector Power Dissipation
@ Ta=25℃
TJ Junction Temperature
Tstg Storage Temperature Range
-8 A
20 W
1.0 W
150 ℃
-55~150
℃
isc website：www.iscsemi.com
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1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SB1216.PDF ] | |
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