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Numéro de référence | 2SB1215 | ||
Description | Silicon PNP Power Transistor | ||
Fabricant | Inchange Semiconductor | ||
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1 Page
isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SB1215
DESCRIPTION
·Excellent linearity of hFE
·Small and slim package making it easy to make 2SB1215/2SD1815-used set smaller
·Low collector-to-emitter saturation voltage
·Fast switching speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Relay drivers,High speed inverters,converters and other
general high-current switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-120
V
VCEO
Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage
-6 V
IC Collector Current-Continuous -3 A
ICP Collector Current-Pulse
Collector Power Dissipation
@ TC=25℃
PC
Collector Power Dissipation
@ Ta=25℃
TJ Junction Temperature
Tstg Storage Temperature Range
-6 A
20 W
1.0 W
150 ℃
-55~150
℃
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
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Pages | Pages 3 | ||
Télécharger | [ 2SB1215 ] |
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