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Inchange Semiconductor - Silicon NPN Power Transistor

Numéro de référence BD189
Description Silicon NPN Power Transistor
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor 





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BD189 fiche technique
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BD189
DESCRIPTION
·DC Current Gain-
: hFE= 40(Min)@ IC= 0.5A
·Collector-Emitter Sustaining Voltage -
: VCEO(SUS)= 60V(Min)
·Complement to type BD190
APPLICATIONS
·Designed for use in 5~10 Watt audio amplifiers utilizing
Complementary or quasi complementary circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
70 V
VCEO
Collector-Emitter Voltage
60 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current-Continuous
4A
IB Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25
TJ Junction Temperature
2A
40 W
150
Tstg Storage Temperature Range
-65~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
3.12 /W
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark

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