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2EZ3.3D10 fiches techniques PDF

EIC - SILICON ZENER DIODES

Numéro de référence 2EZ3.3D10
Description SILICON ZENER DIODES
Fabricant EIC 
Logo EIC 





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2EZ3.3D10 fiche technique
Certificate TH97/10561QM
Certificate TW00/17276EM
2EZ2.7D10 ~ 2EZ200D10 SILICON ZENER DIODES
VZ : 2.7 - 200 Volts
PD : 2 Watts
FEATURES :
* Complete Voltage Range 2.7 to 200 Volts
* High peak reverse power dissipation
* High reliability
* Low leakage current
** ±Pb10/ %RotHolSerFanrecee
MECHANICAL DATA
* Case : DO-41 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.339 gram
DO - 41
0.108 (2.74)
0.078 (1.99)
0.034 (0.86)
0.028 (0.71)
1.00 (25.4)
MIN.
0.205 (5.20)
0.161 (4.10)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS
Rating at 25 °C ambient temperature unless otherwise specified
Rating
DC Power Dissipation at TL = 75 °C (Note1)
Maximum Forward Voltage at IF = 200 mA
Junction Temperature Range
Storage Temperature Range
Note :
(1) TL = Lead temperature at 3/8 " (9.5mm) from body
Symbol
PD
VF
TJ
TSTG
Value
2.0
1.2
- 55 to + 175
- 55 to + 175
Fig. 1 POWER TEMPERATURE DERATING CURVE
2.5
L = 3/8" (9.5mm)
2.0
Unit
W
V
°C
°C
1.5
0.5
0
0 25 50 75 100 125 150 175
TL, LEAD TEMPERATURE (°C)
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Rev. 07 : November 5, 2007

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