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Comchip Technology - SMD Schottky Barrier Diode

Numéro de référence CDBU0245
Description SMD Schottky Barrier Diode
Fabricant Comchip Technology 
Logo Comchip Technology 





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CDBU0245 fiche technique
SMD Schottky Barrier Diode
CDBU0245 (Lead-free Device)
Io = 200 mA
VR = 45 Volt s
Features
COMCHIP
www.comchip.com.tw
Designed for mounting on small surface.
Extremely thin/leadless package.
Low leakage current (IR=0.1uA typ.
@VR=10V).
Majority carrier conduction.
0603(1608)
0.071(1.80)
0.063(1.60)
0.039(1.00)
0.031(0.80)
Mechanical data
Case: 0603 (1608) Standard package ,
molded plastic.
Terminals: Gold plated, solderable per
MIL-STD-750, method 2026.
Polarity: Indicated by cathode band.
Mounting position: Any.
Weight: 0.003 gram (approximately).
0.010(0.25) Typ.
0.033 (0.85)
0.027 (0.70)
0.012 (0.30) Typ.
0.014(0.35) Typ.
Dimensions in inches and (millimeter)
Maximum Rating ( at T A = 25 C unless otherwise noted )
Parameter
Repetitive peak reverse voltage
Reverse voltage
Average forward current
Conditions
Symbol Min Typ Max Unit
VRRM
50 V
VR 45 V
Io 200 mA
Forward current , surge peak
8.3 ms single half sine-wave superimposed
on rate load ( JEDEC method )
IFSM
2000
mA
Power Dissipation
Storage temperature
Junction temperature
PD
TSTG
Tj
-40
-40
150
+125
+125
mW
C
C
Electrical Characteristics ( at T A = 25 C unless otherwise noted )
Parameter
Conditions
Forward voltage
I F = 200 mA DC
Reverse current
VR = 10 V
Capacitance between terminals f = 1MHz, and 10 VDC reverse voltage
Symbol Min Typ Max Unit
VF 0.55 V
IR 1 uA
CT 9 pF
RDS0301009-B

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