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Comchip Technology - SMD Schottky Barrier Diode

Numéro de référence CDBS0145
Description SMD Schottky Barrier Diode
Fabricant Comchip Technology 
Logo Comchip Technology 





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CDBS0145 fiche technique
SMD Schottky Barrier Diode
CDBS0145
Io = 100mA
VR = 45 Volt s
Features
Designed for mounting on small surface
Extremely thin package
Low stored charge
Majority carrier conduction
Mechanical data
Case: 0805(2012) Standard package,
molded plastic.
Terminals: Solder plated, solderable per
MIL-STD-750, method 2026.
Polarity: Indicated by cathode band.
Mounting position: Any.
Weight: 0.0048 gram. (approximately)
COMCHIP
www.comchip.com.tw
0805(2012)
0.087(2.20)
0.079(2.00)
0.016(0.40) Typ
0.008(R0.20) Typ.
0.055(1.40)
0.047(1.20)
0.043 (1.10)
0.035(0.90)
Dimensions in inches and (millimeter)
Maximum Rating ( at T A = 25 C unless otherwise noted )
Parameter
Repetitive peak reverse voltage
Reverse voltage
Average forward current
Conditions
Symbol Min Typ Max Unit
VRRM
50 V
VR 45 V
Io 100 mA
Forward current , Surge peak
8.3 ms single half sine-wave superimposed
on rate load ( JEDEC method )
IFSM
1000
mA
Power Dissipation
Storage temperature
Junction temperature
PD
TSTG
Tj
-40
-40
250
+125
+125
mW
C
C
Electrical Characteristics ( at T A = 25 C unless otherwise noted )
Parameter
Conditions
Forward voltage
I F = 100 mA DC
Reverse current
VR = 45 V
Capacitance between terminals f = 1MHz, and 10 VDC reverse voltage
Symbol Min Typ Max Unit
VF 0.55 V
IR 30 uA
CT 10 pF
RDS0208011-C
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