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Inchange Semiconductor - Silicon NPN Power Transistor

Numéro de référence BDY25B
Description Silicon NPN Power Transistor
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor 





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BDY25B fiche technique
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BDY25B
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 140V(Min.)
·Collector-Emitter Saturation Voltage-
: VCE(sat)= 0.6V(Max)@ IC = 2A
·High Switching Speed
APPLICATIONS
·Designed for LF signal powe amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
200 V
VCEO
Collector-Emitter Voltage
140 V
VEBO
Emitter-Base Voltage
10 V
IC Collector Current-Continuous
6A
IB Base Current
3A
PC Collector Power Dissipation@TC=2587.5 W
TJ Junction Temperature
200
Tstg Storage Temperature
-65~200
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
2.0 /W
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark

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