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Numéro de référence | BDT92 | ||
Description | Silicon PNP Power Transistor | ||
Fabricant | Inchange Semiconductor | ||
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1 Page
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
BDT92/94/96
DESCRIPTION
·DC Current Gain- hFE= 20~200@ IC= -4A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -60V(Min)- BDT92; -80V(Min)- BDT94;
-100V(Min)- BDT96
·Complement to Type BDT91/93/95
APPLICATIONS
·Designed for use in audio output stages and general
amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
BDT92
-60
VCBO
Collector-Base Voltage BDT94
-80
BDT96
-100
BDT92
-60
VCEO
Collector-Emitter Voltage BDT94
-80
BDT96
-100
VEBO
Emitter-Base Voltage
-7
IC Collector Current-Continuous
-10
ICM Collector Current-Peak
-20
IB Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25℃
TJ Junction Temperature
-4
90
150
Tstg Storage Temperature Range
-65~150
UNIT
V
V
V
A
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
1.4 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient 70 ℃/W
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
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Pages | Pages 2 | ||
Télécharger | [ BDT92 ] |
No | Description détaillée | Fabricant |
BDT91 | (BDT91 - BDT95) Transistor | Magna |
BDT91 | Trans GP BJT NPN 100V 15A 3-Pin(3+Tab) TO-220 | New Jersey Semiconductor |
BDT91F | Silicon NPN Power Transistor | Inchange Semiconductor |
BDT92 | Silicon PNP Power Transistor | Inchange Semiconductor |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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