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PDF BDS12 Data sheet ( Hoja de datos )
| Número de pieza | BDS12 | |
| Descripción | Silicon NPN Power Transistor | |
| Fabricantes | Inchange Semiconductor | |
| Logotipo |  |
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NCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BDS12
DESCRIPTION
·High Voltage: VCEV= 100V(Min)
·Low Saturation Voltage-
: VCE(sat)= 1.0V(Max)@ IC= 5A
·High Reliablity
APPLICATIONS
·Designed for power linear and switching application and
General puepose power.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VCBO
Collector-Base Voltage
100
VCEV
Collector-Emitter Voltage
100
VCEO
Collector-Emitter Voltage
100
VEBO
Emitter-Base Voltage
5
IC Collector Current-Continuous
15
IB Base Current
PC
Collector Power Dissipation
@ TC=25℃
TJ Junction Temperature
5
90
150
Tstg Storage Temperature Range
-65~150
UNIT
V
V
V
V
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case
1.4 ℃/W
Rth j-a
Thermal Resistance, Junction to Ambient
80 ℃/W
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet BDS12.PDF ] | |
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