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KTD3055 fiches techniques PDF

Inchange Semiconductor - Silicon NPN Power Transistors

Numéro de référence KTD3055
Description Silicon NPN Power Transistors
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor 





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KTD3055 fiche technique
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
KTD3055
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min)
·Complement to Type KTB2955
APPLICATIONS
·High power amplifier applications
·Recommended for 30~35W audio frequency amplifier output
stage application.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
120 V
VCEO
Collector-Emitter Voltage
120 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current-Continuous
10 A
IB Base Current
PC
Collector Power Dissipation
@TC=25
TJ Junction Temperature
1A
40 W
150
Tstg Storage Temperature
-55~150
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark

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