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Numéro de référence | KTD2058 | ||
Description | Silicon NPN Power Transistors | ||
Fabricant | Inchange Semiconductor | ||
Logo | |||
1 Page
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
KTD2058
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min.)
·Collector Power Dissipation
: PC= 25 W@ TC= 25℃
·Low Collector Saturation Voltage-
: VCE(sat)= -1.0V(Max)@ (IC= -2A, IB= -0.2A)
·Complement to Type KTB1366
APPLICATIONS
·Designed for low frequency power amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60 V
VCEO
Collector-Emitter Voltage
60 V
VEBO
Emitter-Base Voltage
7V
IC Collector Current-Continuous 3 A
IB Base Current-Continuous
Collector Power Dissipation
@ Ta=25℃
PC
Collector Power Dissipation
@ TC=25℃
TJ Junction Temperature
0.5 A
2
W
25
150 ℃
Tstg Storage Temperature Range
-55~150
℃
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
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Pages | Pages 2 | ||
Télécharger | [ KTD2058 ] |
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