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Inchange Semiconductor - Silicon PNP Power Transistors

Numéro de référence KTB1367
Description Silicon PNP Power Transistors
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor 





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KTB1367 fiche technique
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
KTB1367
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -100V(Min)
·Collector Power Dissipation-
: PC= 30W@ TC= 25
·Low Collector Saturation Voltage-
: VCE(sat)= -2.0V(Max)@ (IC= -4A, IB= -0.4A)
·Complement to Type KTD2059
APPLICATIONS
·Designed for general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-100
V
VCEO
Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage
-5 V
IC Collector Current-Continuous
-5 A
IB Base Current-Continuous
PC
Collector Power Dissipation
@TC=25
TJ Junction Temperature
Tstg Storage Temperature
-0.5 A
30 W
150
-55~150
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark

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