DataSheetWiki


KTA1659A fiches techniques PDF

Inchange Semiconductor - Silicon PNP Power Transistors

Numéro de référence KTA1659A
Description Silicon PNP Power Transistors
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor 





1 Page

No Preview Available !





KTA1659A fiche technique
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
KTA1659A
DESCRIPTION
·High Collector-Emitter Breakdown Voltage
VCEO= -180V(Min)
·Complement to Type KTC4370A
APPLICATIONS
·Designed for high voltage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-180
V
VCEO
Collector-Emitter Voltage
-180
V
VEBO
Emitter-Base Voltage
-5.0 V
IC(DC)
Collector Current(DC)
-1.5 A
IB(DC)
PC
TJ
Base Current
Collector Power Dissipation
@TC=25
Junction Temperature
Tstg Storage Temperature
-0.15
A
20 W
150
-55~150
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark

PagesPages 2
Télécharger [ KTA1659A ]


Fiche technique recommandé

No Description détaillée Fabricant
KTA1659 Silicon PNP Power Transistors Inchange Semiconductor
Inchange Semiconductor
KTA1659 EPITAXIAL PLANAR PNP TRANSISTOR KEC
KEC
KTA1659A Silicon PNP Power Transistors Inchange Semiconductor
Inchange Semiconductor
KTA1659A EPITAXIAL PLANAR PNP TRANSISTOR KEC
KEC

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche