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Numéro de référence | KTA1659A | ||
Description | Silicon PNP Power Transistors | ||
Fabricant | Inchange Semiconductor | ||
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1 Page
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
KTA1659A
DESCRIPTION
·High Collector-Emitter Breakdown Voltage
VCEO= -180V(Min)
·Complement to Type KTC4370A
APPLICATIONS
·Designed for high voltage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-180
V
VCEO
Collector-Emitter Voltage
-180
V
VEBO
Emitter-Base Voltage
-5.0 V
IC(DC)
Collector Current(DC)
-1.5 A
IB(DC)
PC
TJ
Base Current
Collector Power Dissipation
@TC=25℃
Junction Temperature
Tstg Storage Temperature
-0.15
A
20 W
150 ℃
-55~150 ℃
isc website: www.iscsemi.com
1 isc & iscsemi is registered trademark
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Pages | Pages 2 | ||
Télécharger | [ KTA1659A ] |
No | Description détaillée | Fabricant |
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