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Inchange Semiconductor - Silicon NPN Power Transistors

Numéro de référence KT863A
Description Silicon NPN Power Transistors
Fabricant Inchange Semiconductor 
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KT863A fiche technique
INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
KT863A
DESCRIPTION
·Low Collector Saturation Voltage
: VCE(sat)= 0.4V(Max)@ IC=5A
·Wide Area of Safe Operation
APPLICATIONS
·Designed for relay drivers, high-speed inverters, converters,
and other general high-current switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
50 V
VCEO
Collector-Emitter Voltage
30 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current-Continuous 10 A
PC
Collector Power Dissipation
@ TC=25
50 W
TJ Junction Temperature
150
Tstg Storage Temperature Range
-55~150
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark

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