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S30C150C fiches techniques PDF

Mospec Semiconductor - Schottky Barrier Rectifiers

Numéro de référence S30C150C
Description Schottky Barrier Rectifiers
Fabricant Mospec Semiconductor 
Logo Mospec Semiconductor 





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S30C150C fiche technique
MOSPEC
Schottky Barrier Rectifiers
Using the Schottky Barrier principle with a Molybdenum barrier metal.
These state-of-the-art geometry features epitaxial construction with oxide
passivation and metal overlay contact. Ideally suited for low voltage, high
frequency rectification, or as free wheeling and polarity protection diodes.
Features
Low Forward Voltage.
Low Switching noise.
High Current Capacity
Guarantee Reverse Avalanche.
Guard-Ring for Stress Protection.
Low Power Loss & High efficiency.
150 Operating Junction Temperature
Low Stored Charge Majority Carrier Conduction.
Plastic Material used Carries Underwriters Laboratory
Flammability Classification 94V-O
S30C150C
SCHOTTKY BARRIER
RECTIFIERS
30 AMPERES
150 VOLTS
TO-220AB
In compliance with EU RoHs 2002/95/EC directives
MAXIMUM RATINGS
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Symbol
VRRM
VRWM
VR
RMS Reverse Voltage
VR(RMS)
Average Rectifier Forward Current ( per diode )
Total Device (Rated VR), TC=100
IF(AV)
Peak Repetitive Forward Current
(Rate VR, Square Wave, 20kHz)
Non-Repetitive Peak Surge Current (Surge
applied at rate load conditions half-wave,
single phase, 60Hz)
IFM
IFSM
Operating and Storage Junction Temperature
Range
TJ , Tstg
S30C150C
150
105
15
30
30
200
-65 to +150
Unit
V
V
A
A
A
DIM MILLIMETERS
MIN MAX
A 14.68 15.32
B 9.78 10.42
C 5.02 6.52
D 13.06 14.62
E 3.57 4.07
F 2.42 2.66
G 1.12 1.36
H 0.72 0.96
I 4.22 4.98
J 1.14 1.38
K 2.20 2.98
L 0.33 0.55
M 2.48 2.98
O 3.70 3.90
ELECTRIAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage
( IF =15 Amp TC = 25 )
( IF =15 Amp TC = 125 )
Maximum Instantaneous Reverse Current
( Rated DC Voltage, TC = 25 )
( Rated DC Voltage, TC = 125 )
Symbol
VF
IR
S30C150C
0.95
0.85
0.2
30
Unit
V
mA

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