|
|
Numéro de référence | 2SC5450 | ||
Description | Silicon NPN Power Transistor | ||
Fabricant | Inchange Semiconductor | ||
Logo | |||
1 Page
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC5450
DESCRIPTION
·High Breakdown Voltage-
: VCBO= 1600V (Min)
·High Speed Switching
·High Reliability
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Color TV horizontal deflection output
·Color display horizontal deflection output
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1600
V
VCEO
Collector-Emitter Voltage
800 V
VEBO
Emitter-Base Voltage
6V
IC Collector Current- Continuous
10
A
ICP Collector Current-Pulse
PC
Collector Power Dissipation
@ TC=25℃
TJ Junction Temperature
25 A
70 W
150 ℃
Tstg Storage Temperature Range
-55~150
℃
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
|
|||
Pages | Pages 2 | ||
Télécharger | [ 2SC5450 ] |
No | Description détaillée | Fabricant |
2SC5450 | Silicon NPN Power Transistor | Inchange Semiconductor |
2SC5450 | Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications | Sanyo Semicon Device |
2SC5451 | Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications | Sanyo Semicon Device |
2SC5452 | Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications | Sanyo Semicon Device |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |