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Inchange Semiconductor - Silicon NPN Power Transistor

Numéro de référence 2SC5450
Description Silicon NPN Power Transistor
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor 





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2SC5450 fiche technique
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC5450
DESCRIPTION
·High Breakdown Voltage-
: VCBO= 1600V (Min)
·High Speed Switching
·High Reliability
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Color TV horizontal deflection output
·Color display horizontal deflection output
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1600
V
VCEO
Collector-Emitter Voltage
800 V
VEBO
Emitter-Base Voltage
6V
IC Collector Current- Continuous
10
A
ICP Collector Current-Pulse
PC
Collector Power Dissipation
@ TC=25
TJ Junction Temperature
25 A
70 W
150
Tstg Storage Temperature Range
-55~150
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark

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