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Numéro de référence | 2SC3518-Z | ||
Description | Silicon NPN Power Transistor | ||
Fabricant | Inchange Semiconductor | ||
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1 Page
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC3518-Z
DESCRIPTION
·Low collector saturation voltage
·High DC current gain
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·This transistor is ideal for audio frequency amplifier and
switching especially in hybrid integrated circuits
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60 V
VCEO
Collector-Emitter Voltage
60 V
VEBO
Emitter-Base Voltage
7V
IC Collector Current-Continuous 5 A
ICM Collector Current-Peak NOTE1
PC
Collector Power Dissipation
@Ta=25℃ NOTE2
TJ Junction Temperature
7A
2W
150 ℃
Tstg Storage Temperature Range
NOTE1:PW≤300ms,Duty cycle ≤10%
NOTE2:Printing boarding mounted
-55~150
℃
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
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Pages | Pages 2 | ||
Télécharger | [ 2SC3518-Z ] |
No | Description détaillée | Fabricant |
2SC3518-Z | NPN SILICON EPITAXIAL TRANSISTOR MP-3 | NEC |
2SC3518-Z | Silicon NPN Power Transistor | Inchange Semiconductor |
2SC3518-Z | NPN Silicon Epitaxia | Kexin |
2SC3518-Z | SILICON POWER TRANSISTOR | Renesas |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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