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2SC2314 fiches techniques PDF

Inchange Semiconductor - Silicon NPN Power Transistor

Numéro de référence 2SC2314
Description Silicon NPN Power Transistor
Fabricant Inchange Semiconductor 
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2SC2314 fiche technique
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC2314
DESCRIPTION
·Collector-Emitter Voltage-
:VCER= 75V(Min) ;RBE=150Ω
·Collector Current-
:IC=1.0A
·Low Saturation Voltage
: VCE(sat)=0.6V(MAX)@ IC=0.5A
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Power Amplifier Applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
VCER
Collector-Emitter Voltage RBE=150Ω
75
75
V
V
VCEO Collector-Emitter Voltage
45 V
VEBO
Emitter-Base Voltage
6V
IC Collector Current-Continuous
1.0 A
ICM Collector Current-Peak
PC
Collector Power Dissipation
@ Tc=25
TJ Junction Temperature
Tstg Storage Temperature Range
1.5 A
5W
150
-55~150
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark

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