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PDF 2SB1412 Data sheet ( Hoja de datos )
| Número de pieza | 2SB1412 | |
| Descripción | Silicon PNP Power Transistor | |
| Fabricantes | Inchange Semiconductor | |
| Logotipo |  |
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isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SB1412
DESCRIPTION
·Small and slim package making it easy to make 2SB1205-used set smaller
·Low collector-to-emitter saturation voltage
·Fast switching speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Power amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-30 V
VCEO
Collector-Emitter Voltage
-20 V
VEBO
Emitter-Base Voltage
-6 V
IC Collector Current-Continuous
PC
Collector Power Dissipation
@ Ta=25℃
TJ Junction Temperature
-5 A
1.0 W
150 ℃
Tstg Storage Temperature Range
-55~150
℃
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SB1412.PDF ] | |
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