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PDF THN450Z Data sheet ( Hoja de datos )
| Número de pieza | THN450Z | |
| Descripción | SiGe NPN Transistor | |
| Fabricantes | AUK | |
| Logotipo |  |
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Semiconductor
THN450Z
SiGe NPN Transistor
□ Applications
- Low noise amplifier, oscillator and buffer amplifier up to 3 GHz
SOT-343
Unit in mm
□ Features
- High gain bandwidth product
fT = 16 GHz @ VCE = 2 V, IC = 50 mA
fT = 18 GHz @ VCE = 3 V, IC = 70 mA
- High power gain
|S21|2 = 12 dB @ VCE = 2 V, IC = 50 mA, f = 1.8 GHz
MAG = 14 dB @ VCE = 2 V, IC = 50 mA, f = 1.8 GHz
- Low noise figure
NF = 1.5 dB @ VCE = 2 V, IC = 7 mA, f = 1.8 GHz
□ Absolute Maximum Ratings ( TA = 25 ℃ )
Param eter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Current
Total Power Dissipation
Operating Junction Temperature
Storage Temperature
Sym bol
BVCBO
BVCEO
BVEBO
IC
Ptot
Tj
Tstg
Caution : Electro Static Discharge sensitive device
13
24
Pin Configuration
1. Base
2. Emitter
3. Emitter
4. Collector
Ratings
10
4.5
1.5
100
450
150
-65 ~ 150
Unit
V
V
V
mA
mW
℃
℃
1
1 page  
Power Gain
vs. Frequency
40
V =2V
35
CE
I = 50 mA
C
30
MSG
25
20
15 MAG
10 |S |2
21
5
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
Frequency (GHz)
Noise Figure
vs. Collector Current
at VCE = 2 V, IC =parameters, ZS = ZSopt
4.0
3.5
3.0
f = 1.8 GHz
2.5
2.0 f = 0.9 GHz
1.5
1.0
0.5
0.0
0 10 20 30 40 50 60 70
Collector Current, I (mA)
C
THN450Z
40
V =3V
35
CE
I = 70 mA
C
30
MSG
25
20
MAG
15
10 |S |2
21
5
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
Frequency (GHz)
5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet THN450Z.PDF ] | |
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