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THN4301Z fiches techniques PDF

AUK - SiGe NPN Transistor

Numéro de référence THN4301Z
Description SiGe NPN Transistor
Fabricant AUK 
Logo AUK 





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THN4301Z fiche technique
Semiconductor
Application
LNA and wide band amplifier up to GHz range
Features
o Low Noise Figure
NF = 1.5dB at f = 2 GHz, VCE = 3 V, IC = 5 mA
NF = 1.7dB at f = 2 GHz, VCE = 1 V, IC = 3 mA
o High Gain
MAG = 12.3 dB at f = 2 GHz, VCE = 3 V, IC = 25 mA
MAG = 12.0 dB at f = 2 GHz, VCE = 1 V, IC = 5 mA
o High Transition Frequency
fT = 15 GHz at f = 2 GHz, VCE = 3 V, IC = 25 mA
THN4301 Series
SOT-523
SiGe NPN Transistor
Unit in mm
hFE Classification
Marking AH1
AH2
hFE 125 to 300 80 to 160
Absolute Maximum Ratings
Symbol
Parameter
VCBO Collector to Base Breakdown Voltage
VCEO
VEBO
IC
PT
TSTG
TJ
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Current (DC)
Total Power Dissipation
Storage Temperature
Operating Junction Temperature
Pin Configuration
Pin No
Symbol
1B
2E
3C
Description
Base
Emitter
Collector
Available Package
Product
Package
THN4301U SOT-323
THN4301Z SOT-343
THN4301E SOT-523
Unit : mm
Dimension
2.01.25, 1.0t
2.01.25, 1.0t
1.60.8, 0.8t
Ratings
15
6
2.5
65
150
-65 ~ 150
150
Unit
V
V
V
mA
mW
1

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