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PDF MBR3045WT Data sheet ( Hoja de datos )
| Número de pieza | MBR3045WT | |
| Descripción | Schottky Barrier Rectifier ( Diode ) | |
| Fabricantes | Inchange Semiconductor | |
| Logotipo |  |
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Schottky Barrier Rectifier
INCHANGE Semiconductor
MBR3045WT
FEATURES
·Dual diode construction;terminals 1 and 3 may be connected
for parallel operation at full rating
·Low forward voltage
·Guarding for stress protection
·150℃ operating junction temperature
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
MECHANICAL CHARACTERISTICS
·Case: Epoxy, Molded
·Finish: All External Surfaces Corrosion Resistant and
Terminal Leads are Readily Solderable
·Lead Temperature for Soldering Purposes: 260℃ Max.
for 10 Seconds
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM
VRWM
VR
IF(AV)
IFSM
IRRM
TJ
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
45
Average Rectified Forward Current (Per Leg)
(Total)
15
30
Peak Forward Surge Current, 8.3 ms single
halfsine-wave superimposed on rated load
(JEDEC method)
Peak Repetitive Reverse Surge Current
(2.0μs, 1.0kHz)
200
2.0
Junction Temperature
-65~175
V
A
A
A
℃
Tstg Storage Temperature Range
-65~175 ℃
dv/dt Voltage Rate of Change (Rated VR)
10,000 V/μs
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
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| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MBR3045WT.PDF ] | |
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