DataSheet.es    


PDF MBR3045WTP Data sheet ( Hoja de datos )

Número de pieza MBR3045WTP
Descripción Schottky Rectifier ( Diode )
Fabricantes SANGDEST MICROELECTRONICS 
Logotipo SANGDEST MICROELECTRONICS Logotipo



Hay una vista previa y un enlace de descarga de MBR3045WTP (archivo pdf) en la parte inferior de esta página.


Total 7 Páginas

No Preview Available ! MBR3045WTP Hoja de datos, Descripción, Manual

SANGDEST
MICROELECTRONICS
MBR3045WTP
Technical Data
Data Sheet N0637, Rev. -
MBR3045WTP SCHOTTKY RECTIFIER
Applications:
Switching power supply
Converters
Free-Wheeling diodes
Reverse battery protection
Green Products
Features:
150 TJ operation
Center tap TO-247AD package
Low forward voltage drop
High purity, high temperature epoxy encapsulation for enhanced
mechanical strength and moisture resistance
High frequency operation
Guard ring for enhanced ruggedness and long term reliability
This is a Pb Free Device
All SMC parts are traceable to the wafer lot
Additional testing can be offered upon request
Mechanical Dimensions: In mm
ANODE 1 ANODE 2
13
2
COMMON
CATHODE
BASE
OPTION 1(MX)
Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113  (86) 25-87123907
FAX (86) 25-87123900 World Wide Web Site - http://www.sangdest.com.cn E-Mail Address - sales@ sangdest.com.cn

1 page




MBR3045WTP pdf
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N0637, Rev. -
Electrical Characteristics:
Characteristics
Max. Forward Voltage Drop
(per leg) *
Max. Reverse Current (per
leg) *
Max. Junction Capacitance
(per leg)
Typical Series Inductance
(per leg)
Max. Voltage Rate of Change
Pulse Width < 300µs, Duty Cycle <2%
Symbol
VF1
VF2
IR1
IR2
CT
LS
dv/dt
Condition
@ 15 A, Pulse, TJ = 25 °C
@ 15 A, Pulse, TJ = 125 °C
@VR = rated VR
TC = 25 °C
@VR = rated VR
TC = 125 °C
@VR = 5V, TC = 25 °C
fSIG = 1MHz
Measured lead to lead 5 mm from
package body
-
MBR3045WTP
Green Products
Max.
0.70
0.57
1.0
100
800
7.5
10,000
Units
V
V
mA
mA
pF
nH
V/μs
Thermal-Mechanical Specifications:
Characteristics
Junction Temperature Range
Storage Temperature Range
Maximum Thermal
Resistance Junction to Case
(per leg)
Approximate Weight
Case Style
Symbol
TJ
Tstg
RθJC
Condition
-
-
DC operation
wt -
TO-247AD
Specification
-55 to +150
-55 to +150
1.40
Units
°C
°C
°C/W
6g
Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113  (86) 25-87123907
FAX (86) 25-87123900 World Wide Web Site - http://www.sangdest.com.cn E-Mail Address - sales@ sangdest.com.cn

5 Page










PáginasTotal 7 Páginas
PDF Descargar[ Datasheet MBR3045WTP.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
MBR3045WTSwitch Mode Power RectifierON Semiconductor
ON Semiconductor
MBR3045WTSchottky Rectifier ( Diode )SANGDEST MICROELECTRONICS
SANGDEST MICROELECTRONICS
MBR3045WTSchottky Rectifier ( Diode )Vishay
Vishay
MBR3045WTSchottky Barrier Rectifier ( Diode )Inchange Semiconductor
Inchange Semiconductor

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar