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Numéro de référence | MBR3045CT | ||
Description | Schottky Barrier Rectifier ( Diode ) | ||
Fabricant | Inchange Semiconductor | ||
Logo | |||
1 Page
INCHANGE Semiconductor
Schottky Barrier Rectifier
Product Specification
MBR3045CT
FEATURES
·Dual Rectifier Conduction, Positive Center Tap
·Low Power Loss/High Efficiency
·High Current Capability, Low Forward Voltage Drop
·High Surge Capacity
·Guarding for Overvoltage protection
·For Use in Low Voltage, High Frequency Inverters, Free
Wheeling, and Polarity Protection Applications
MECHANICAL CHARACTERISTICS
·Case: Epoxy, Molded
·Finish: All External Surfaces Corrosion Resistant and
Terminal Leads are Readily Solderable
·High Temperature Soldering Guaranteed:
250℃ Max. for 10 Seconds
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM
VRMS
VR
IF(AV)
IFSM
IRRM
Peak Repetitive Reverse Voltage
RMS Voltage
DC Blocking Voltage
Average Rectified Forward Current (Per Leg)
(Total)
Nonrepetitive Peak Surge Current
8.3ms single half sine-wave superimposed on
rated load conditions
Peak Repetitive Reverse Surge Current (2μS
- 1Khz)
45
15
30
250
2
V
A
A
A
TJ Junction Temperature
-55~150 ℃
Tstg Storage Temperature Range
-55~150 ℃
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
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Pages | Pages 2 | ||
Télécharger | [ MBR3045CT ] |
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