(PDF) MBR16150CT Datasheet - Schottky Barrier Rectifier ( Diode )

Número de pieza	MBR16150CT
Descripción	Schottky Barrier Rectifier ( Diode )
Fabricantes	Inchange Semiconductor
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No Preview Available ! Schottky Barrier Rectifier INCHANGE Semiconductor MBR16150CT FEATURES ·Metal of silicon rectifier, majonty carrier conduction ·Guard ring for transient protection ·Low power loss high efficiency ·High current capability,low VF ·High surge capacity ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for in low voltage,high frequency inverters，free wheeling,and polarity protection applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR VR(RMS) Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltag IF(AV) IFSM Average Rectified Forward Current (Rated VR) TC= 125℃ Nonrepetitive Peak Surge Current (Surge applied at rated load conditions half- wave, single phase, 60Hz) 150 105 16 150 V V A A TJ Junction Temperature -55~150 ℃ Tstg Storage Temperature Range -55~175 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark 1 page

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PDF MBR16150CT Data sheet ( Hoja de datos )