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Numéro de référence | MBR15200 | ||
Description | Schottky Barrier Rectifier ( Diode ) | ||
Fabricant | Inchange Semiconductor | ||
Logo | |||
1 Page
Schottky Barrier Rectifier
INCHANGE Semiconductor
MBR15200
FEATURES
·Low forward voltage
·High frequency operation
·Guard ring for enhanced ruggedness and long term reliability
·This is a Pb-Free Device
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Switching power supply
·Converters
·Free-Wheeling diodes
·Reverse battery protection
·Center tap configuration
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM
VRWM
VR
IF(AV)
IFSM
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated VR) TC= 135℃
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions half-
wave, single phase, 60Hz)
200
15
150
V
A
A
TJ Junction Temperature
-55~150 ℃
Tstg Storage Temperature Range
-55~150 ℃
dv/dt Voltage Rate of Change (Rated VR)
10,000 V/μs
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
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Pages | Pages 2 | ||
Télécharger | [ MBR15200 ] |
No | Description détaillée | Fabricant |
MBR1520 | (MBR1520 - MBR15100) Schottky Barrier Rectifier | MCC |
MBR15200 | Schottky Barrier Rectifier ( Diode ) | Inchange Semiconductor |
MBR15200 | Schottky Rectifier ( Diode ) | SANGDEST MICROELECTRONICS |
MBR15200CT | Schottky Barrier Rectifiers | LGE |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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