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MBR15200 fiches techniques PDF

Inchange Semiconductor - Schottky Barrier Rectifier ( Diode )

Numéro de référence MBR15200
Description Schottky Barrier Rectifier ( Diode )
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor 





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MBR15200 fiche technique
Schottky Barrier Rectifier
INCHANGE Semiconductor
MBR15200
FEATURES
·Low forward voltage
·High frequency operation
·Guard ring for enhanced ruggedness and long term reliability
·This is a Pb-Free Device
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Switching power supply
·Converters
·Free-Wheeling diodes
·Reverse battery protection
·Center tap configuration
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VRRM
VRWM
VR
IF(AV)
IFSM
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated VR) TC= 135
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions half-
wave, single phase, 60Hz)
200
15
150
V
A
A
TJ Junction Temperature
-55~150
Tstg Storage Temperature Range
-55~150
dv/dt Voltage Rate of Change (Rated VR)
10,000 V/μs
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark

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