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Numéro de référence | TIP42C | ||
Description | Silicon PNP Power Transistor | ||
Fabricant | Inchange Semiconductor | ||
Logo | |||
1 Page
INCHANGE Semiconductor
isc Silicon PNP Power Transistors
DESCRIPTION
·DC Current Gain -hFE = 30(Min)@ IC= -0.3A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -100V(Min)
·Complement to Type TIP41C
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
·Designed for use in general purpose amplifer and switching
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-100
V
VCEO
Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage
-5 V
IC Collector Current-Continuous
-6 A
ICM Collector Current-Peak
-10 A
IB Base Current
Collector Power Dissipation
TC=25℃
PC Collector Power Dissipation
Ta=25℃
Tj Junction Temperature
-2 A
65
W
2
150 ℃
Tstg Storage Temperature Range
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
1.92 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W
isc Product Specification
TIP42C
isc website: www.iscsemi.com
1 isc & iscsemi is registered trademark
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Pages | Pages 2 | ||
Télécharger | [ TIP42C ] |
No | Description détaillée | Fabricant |
TIP42 | PNP PLASTIC POWER TRANSISTORS | CDIL |
TIP42 | PNP SILICON POWER TRANSISTOR | Central Semiconductor |
TIP42 | PNP SILICON POWER TRANSISTORS | Power Innovations Limited |
TIP42 | PNP (MEDIUM POWER LINEAR SWITCHING APPLICATIONS) | Samsung semiconductor |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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